Verschiedene Speicherschaltungen
Microchip Technology Inc.
93LC86CT-I-ST
Microchip Technology 93LC86CT-I-ST 16Kbit Serieller EEPROM IC
Microchip Technology Inc.
93LC86T-I-SN
Microchip 93LC86T-I-SN 16K Serielle EEPROM, SOIC-8-TR, Industrielle Temperatur
Microchip Technology Inc.
93LC86T-SN
Microchip 93LC86T-SN 16K Serielle EEPROM, SOIC-8-TR
Samsung
1103-001441
Samsung 24C1024 IC-EEPROM, 1 Mbit, 128Kx8, SOP-8P
Sony
6116-120
Sony 6116-120 Statisches RAM (SRAM) 2K x 8, 120ns, 24-Pin
Samsung
6116-SMD-120
Samsung 6116-SMD-120 Statisches RAM (SRAM) 2K x 8, 120ns, 24-Pin SO
--
9346N
National Semiconductor NMC9346N EEPROM, 128x8 oder 64x16, 8-Pin
--
27128-DIV
27128-DIV UV EPROM IC – Löschbarer Programmierbarer Nur-Lese-Speicher Baustein
--
27512-200
Generische 27512-200 EPROM 64Kx8 200ns 12.5V
--
AK6420AF-E2
AK6420AF-E2 Oberflächenmontiertes Bauteil für SONY SLVX711
Amd
AM29F040B-70EC
Amd AM29F040B-70EC 4Mbit 5V 512x8bit CMOS Flash-Speicher 32-Pin SMD TS-32
Amd
AM29F040B-90JF
AMD AM29F040B-90JF 4Mbit CMOS Flash-Speicher, PLCC-32
Alliance Semiconductor
AS6C6264-55PCN
Alliance AS6C6264-55PCN 64K Asynchrones SRAM, DIP-28
Alliance Semiconductor
AS7C164-20PC
Alliance AS7C164-20PC 64K CMOS SRAM, DIP-28
Microchip Technology Inc.
AT21CS01-MSHM10-T
Microchip AT21CS01-MSHM10-T 125Kbps EEPROM, 2-XSFN
Microchip Technology Inc.
AT21CS01-SSHM10-B
Microchip AT21CS01-SSHM10-B 125Kbps EEPROM, 8-SOIC
Microchip Technology Inc.
AT21CS01-SSHM10-T
Microchip AT21CS01-SSHM10-T 125Kbps EEPROM, 8-SOIC
Microchip Technology Inc.
AT21CS01-STUM10-T
Microchip AT21CS01-STUM10-T 125Kbps EEPROM, 3-SOT23
--
AT21CS01-TOHM10-B
Microchip AT21CS01-TOHM10-B 1.7-3.6V 125Kbps Industrielle Temperatur TO-92 Speicher
Microchip Technology Inc.
AT21CS11-MSH10-B
Microchip Technology AT21CS11-MSH10-B 1-Wire EEPROM Speicher-IC, 1Kbit, SOT-23-3 Gehäuse
